? 2013 ixys corporation, all rights reserved IXYK100N120B3 ixyx100n120b3 v ces = 1200v i c110 = 100a v ce(sat) 2.6v t fi(typ) = 240ns ds100519a(03/13) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 a t j = 150 c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 2.20 2.60 v t j = 150 c 2.76 v symbol test conditions maximum ratings v ces t j = 25c to 175c 1200 v v cgr t j = 25c to 175c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 225 a i lrms terminal current limit 160 a i c110 t c = 110c 100 a i cm t c = 25c, 1ms 530 a i a t c = 25c 50 a e as t c = 25c 1.2 j ssoa v ge = 15v, t vj = 150c, r g = 1 i cm = 200 a (rbsoa) clamped inductive load @v ce v ces p c t c = 25c 1150 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g 1200v xpt tm igbts genx3 tm g = gate e = emitter c = collector tab = collector to-264 (ixyk) e g c plus247 (ixyx) g tab tab e c g extreme light punch through igbt for 5-30 khz switching features z optimized for 5-30khz switching z square rbsoa z positive thermal coefficient of vce(sat) z avalanche rated z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYK100N120B3 ixyx100n120b3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 30 52 s c ie s 6000 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 367 pf c res 127 pf q g(on) 250 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 42 nc q gc 96 nc t d(on) 30 ns t ri 90 ns e on 7.7 mj t d(off) 153 ns t fi 240 ns e of f 7.1 11.5 mj t d(on) 29 ns t ri 96 ns e on 11.4 mj t d(off) 190 ns t fi 260 ns e off 10.1 mj r thjc 0.13 c/w r thcs 0.15 c/w inductive load, t j = 25c i c = i c110 , v ge = 15v v ce = 0.5 ? v ces , r g = 1 note 2 inductive load, t j = 150c i c = i c110 , v ge = 15v v ce = 0.5 ? v ces , r g = 1 note 2 to-264 outline terminals: 1 = gate 2,4 = collector 3 = emitter terminals: 1 - gate 2 - collector 3 - emitter plus247 tm outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved IXYK100N120B3 ixyx100n120b3 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 180 200 00.511.522.533.544.5 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 7v 9v 6v 8v 10v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 8v 11v 9v 7v 6v fig. 3. output characteristics @ t j = 150oc 0 20 40 60 80 100 120 140 160 180 200 012345 v ce - volts i c - amperes 8v 7v 6v 9v v ge = 15v 13v 12v 11v 10v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 100a i c = 50a i c = 200a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 7 8 9 101112131415 v ge - volts v ce - volts i c = 200 a t j = 25oc 100 a 50 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.54.55.56.57.58.59.5 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYK100N120B3 ixyx100n120b3 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. maximum transient thermal impedance aaaaaa 0.3 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 200 300 400 500 600 700 800 900 1000 1100 1200 1300 v ce - volts i c - amperes t j = 150oc r g = 1 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 220 240 260 q g - nanocoulombs v ge - volts v ce = 600v i c = 100a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved IXYK100N120B3 ixyx100n120b3 fig. 12. inductive switching energy loss vs. gate resistance 6 7 8 9 10 11 12 13 12345678910 r g - ohms e off - millijoules 4 6 8 10 12 14 16 18 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 600v i c = 50a i c = 100a fig. 15. inductive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 700 800 12345678910 r g - ohms t f i - nanoseconds 150 200 250 300 350 400 450 500 550 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 100a i c = 50a fig. 13. inductive switching energy loss vs. collector current 4 5 6 7 8 9 10 11 12 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 0 2 4 6 8 10 12 14 16 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 4 5 6 7 8 9 10 11 12 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 12 14 16 e on - millijoules e off e on - - - - r g = 1 ? , v ge = 15v v ce = 600v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. collector current 200 250 300 350 400 450 500 550 600 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanoseconds 130 150 170 190 210 230 250 270 290 t d(off) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 100 200 300 400 500 600 700 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 100 140 180 220 260 300 340 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 1 ? , v ge = 15v v ce = 600v i c = 50a i c = 100a
ixys reserves the right to change limits, test conditions, and dimensions. IXYK100N120B3 ixyx100n120b3 ixys ref: ixy_100n120b3(9t)12-13-12 fig. 19. inductive turn-on switching times vs. collector current 20 40 60 80 100 120 140 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanoseconds 22 24 26 28 30 32 34 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 600v t j = 150oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 24 25 26 27 28 29 30 31 32 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 1 ? , v ge = 15v v ce = 600v i c = 100a i c = 50a fig. 18. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 12345678910 r g - ohms t r i - nanoseconds 20 25 30 35 40 45 50 55 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 50a i c = 100a
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